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GaAs MMIC
CGY 60
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Datasheet
* Low noise preamplifier for mobile communication (PCN, DECT, GSM) in 2.7V to 6V systems * Biased monolithic microwave IC (MMIC) Matched to 50 for 1.7 to 2GHz * Easily matchable to 50 for lower frequencies (i.e. GSM-application) * No bias coil needed * Low noise figure and high gain (typ. NF=1.9dB, G=12.5dB @ 3V, 1.85GHz) * Low power consumption * Frequency range 200 MHz ... 2.5 GHz
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Vd 6
RF-GND 5
RF-out 4
3 2 1 RF-GND DC-GND RF-in
Type
Marking
Ordering code (taped)
Package 1)
CGY 60
Y7s
Q62702G-39
MW-6
Maximum ratings Drain voltage Channel temperature Storage temperature range Total power dissipation (TS < 132C) 2) Thermal resistance Channel-soldering point (GND) Channel-ambient 3)
Symbol
Unit 8 150 -55...+150 80 V C C mW
VD TCh Tstg Ptot
RthChS RthChA
< 220 < 300
K/W K/W
1) Dimensions see chapter Package Outlines 2) Please care for sufficient heat dissipation on the pcb! 3) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm
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pg. 1/7
12.01.96 HL EH PD 21
GaAs MMIC
Electrical characteristics of CGY60 in GSM application circuit
CGY 60
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TA = 25C
f=950MHz
RS = RL = 50
unless otherwise specified Characteristics Drain current Symbol min typ 6 max 9 dB 15.5 17 1.35 1.30 10 10 11 11 dB dB dB dBm Unit mA
ID G
Power Gain
Ud = 3V Ud = 5V
Noise figure
Ud = 3V Ud = 5V
F
Input return loss
Ud = 3V Ud = 5V
RLin
Output return loss
Ud = 3V Ud = 5V
RLout
Third order input intercept point
two-tone intermodulation test f1 = 950MHz, f2 = 951MHz Pin = -20dBm (both carriers) Ud = 3V Ud = 5V
IP3
-
-3 -1
dBm
Input power at 1dB gain compression
Ud = 3V Ud = 5V
P-1dB
-10 -8 -
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pg. 2/7
12.01.96 HL EH PD 21
GaAs MMIC
Electrical characteristics in PCN-, DECT-application circuit
CGY 60
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TA = 25C
f=1850MHz
RS = RL = 50
unless otherwise specified Characteristics Drain current Symbol min typ 6 max 9 dB 12.5 13.5 1.90 1.85 14.5 14.5 14 14 dB dB dB dBm Unit mA
ID G
Power Gain
Ud = 3V Ud = 5V
Noise figure
Ud = 3V Ud = 5V
F
Input return loss
Ud = 3V Ud = 5V
RLin
Output return loss
Ud = 3V Ud = 5V
RLout
Third order input intercept point
two-tone intermodulation test f1 = 1850MHz, f2 = 1851MHz Pin = -20dBm (both carriers) Ud = 3V Ud = 5V
IP3
-
0 2
dBm
Input power at 1dB gain compression
Ud = 3V Ud = 5V
P-1dB
-7 -5 -
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pg. 3/7
12.01.96 HL EH PD 21
GaAs MMIC
CGY 60
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Application Circuit for measuring S- and Noise-parameters
f = 200MHz to 2GHz
Ud 1nF 6 5 Input 50 Ohm 3 4 2 1 100p * 100p
* Output 50 Ohm
50 Ohm Microstripline
* Use 12 to15pF for DECT - or PCN - applications
900MHz Application (GSM)
1nF Ud
27pF
l = 4.1 mm * L Input 50 Ohm l = 5 mm * l = 4.1 mm * l = 6.8 mm * Output
50 Ohm
Open Stub 27pF
50 Ohm Microstripline 120 Ohm L = discrete inductor 15nH, Type SIMID01, Ord.- No: B82412-A3150-M
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pg. 4/7
12.01.96 HL EH PD 21
GaAs MMIC
PCB - Layouts for Application Circuits
PCN -, DECT - application board:
CGY 60
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1nF 15pF
Ud 15pF
15pF 1nF Ud 15pF
in
out
in
out
CGY60 1800MHz
CGY60 1800MHz
actual size ( 20 x 20 mm )
GSM - application board:
1nF 27pF
Ud 27pF
27pF 1nF Ud 27pF
15nH
in
out
in
out
CGY60 900MHz
CGY60 900MHz
actual size ( 20 x 20 mm )
PCB - data: Glass fiber teflon board (double sided) TACONIC TLX-9-0150-CH/CH r = 2.45 thickness = 0.4mm
Siemens Aktiengesellschaft
pg. 5/7
12.01.96 HL EH PD 21
GaAs MMIC
Typical S- and Noise-Parameters
VD = 3 V f/GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 S11 MAG ANG 0.97 0.97 0.96 0.94 0.93 0.91 0.88 0.85 0.81 0.76 0.71 0.64 0.58 0.51 0.43 0.34 0.26 0.19 0.15 0.18 0.24 0.32 0.39 0.46 0.52 -5 -9 -14 -19 -23 -29 -34 -40 -46 -52 -59 -66 -74 -83 -93 -106 -122 -149 172 131 106 90 78 69 61 S21 MAG ANG 2.98 3.85 4.13 4.27 4.35 4.40 4.45 4.48 4.51 4.55 4.60 4.62 4.63 4.61 4.58 4.51 4.40 4.30 4.13 3.94 3.73 3.56 3.33 3.09 2.87 -135 -162 -177 172 163 155 148 140 132 125 117 110 102 94 85 77 69 60 51 43 35 27 20 13 5 Zo = 50 S12 MAG ANG 0.005 0.009 0.013 0.017 0.021 0.026 0.029 0.033 0.037 0.042 0.045 0.048 0.051 0.053 0.054 0.055 0.055 0.054 0.051 0.049 0.046 0.043 0.038 0.033 0.028 80 77 74 73 71 67 65 63 60 54 50 46 41 36 31 26 20 15 11 5 2.5 -5 -9 -11 -12
CGY 60
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S22 MAG ANG 0.74 0.51 0.41 0.35 0.33 0.31 0.30 0.29 0.29 0.28 0.27 0.26 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 0.18 0.18 0.18 0.19 -34 -44 -47 -48 -49 -51 -54 -58 -63 -69 -74 -80 -86 -93 -101 -109 -118 -128 -140 -151 -163 177 170 160 151
f GHz 0.9 1.3 1.8 2.0
Fmin dB 1.27 1.35 1.50 1.60 MAG 0.70 0.63 0.42 0.30
opt ANG deg 27 39 59 62
RN 47.8 32.7 18.2 15.0
12.01.96 HL EH PD 21
Siemens Aktiengesellschaft
pg. 6/7
GaAs MMIC
Typical S- and Noise-Parameters
VD = 5 V f/GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 S11 MAG 0.97 0.97 0.96 0.94 0.93 0.90 0.88 0.85 0.81 0.76 0.71 0.65 0.59 0.52 0.44 0.36 0.28 0.20 0.16 0.17 0.23 0.31 0.38 0.45 0.52 ANG -4 -9 -14 -18 -23 -28 -34 -39 -45 -51 -58 -65 -72 -81 -90 -103 -118 -140 -176 141 113 95 82 72 64 S21 MAG 3.58 4.49 4.78 4.91 4.96 5.02 5.09 5.11 5.14 5.16 5.23 5.25 5.25 5.25 5.21 5.15 5.05 4.93 4.77 4.57 4.36 4.18 3.92 3.66 3.39 ANG -137 -164 -178 171 163 154 147 139 132 125 118 110 102 95 87 78 70 62 53 45 37 29 21 14 7 Zo = 50 S12 MAG 0.005 0.009 0.013 0.017 0.021 0.024 0.028 0.032 0.036 0.041 0.044 0.046 0.049 0.050 0.052 0.052 0.052 0.051 0.050 0.047 0.045 0.042 0.037 0.032 0.027 ANG 74 75 74 71 70 67 64 62 60 55 50 45 42 37 32 27 23 17 13 8 5 -2 -6 -8 -9 S22 MAG 0.72 0.52 0.44 0.39 0.37 0.36 0.35 0.34 0.34 0.33 0.32 0.31 0.30 0.29 0.27 0.26 0.24 0.22 0.20 0.18 0.17 0.16 0.14 0.14 0.14
CGY 60
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ANG -31 -37 -38 -39 -40 -42 -45 -50 -54 -59 -64 -70 -75 -81 -88 -95 -102 -111 -121 -131 -142 -158 -173 174 162
f GHz 0.9 1.3 1.8 2.0
Fmin dB 1.23 1.32 1.45 1.53 MAG 0.69 0.67 0.45 0.32
opt ANG deg 26 39 55 60
RN 47.7 33.3 18.6 15.2
12.01.96 HL EH PD 21
Siemens Aktiengesellschaft
pg. 7/7

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